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采用MEVVA源 (MetalVaporVacuumArcIonSource)离子注入合成 β FeSi2 薄膜 ,用常规透射电镜和高分辨电镜研究了不同制备参数下 β FeSi2 薄膜的显微结构变化 .研究结果表明 :调整注入能量和剂量 ,可以得到厚度不同的β FeSi2 表面层和埋入层 .制备过程中生成的α ,β ,γ和CsCl型FeSi2 相的相变顺序为γ FeSi2 →β FeSi2 →α FeSi2 ,CsCl FeSi2 →β FeSi2 →α FeSi2 或 β FeSi2 →α FeSi2 .当注入参数增加到 60kV ,4× 10 1 7ions cm2 ,就会导致非晶的形成 ,非晶在退火后会晶化为 β FeSi2 相 ,相变顺序就变为非晶→β FeSi2 →α FeSi2 .随退火温度逐渐升高硅化物颗粒逐渐长大 ,并向基体内部生长 ,在一定的退火温度下硅化物层会收缩断裂为一个个小岛状 ,使得硅化物 硅界面平整度下降 .另外 ,对于 β FeSi2 Si界面取向关系的研究表明 ,在Si基体上难以形成高质量 β FeSi2 薄膜的原因在于多种非共格取向关系的并存、孪晶的形成以及由此导致的界面缺陷的形成
The β FeSi2 thin films were prepared by ion implantation of MEVVA source (Metal Vapor Vacuum Arc Source Source). The microstructure of β FeSi2 thin films was investigated by conventional transmission electron microscopy and high resolution electron microscopy. The results show that the energy and dose of β FeSi2 films can be adjusted to different thickness Of β FeSi2 surface layer and the embedded layer.The order of phase transformation of the α, β, γ and CsCl-type FeSi2 phases is γ FeSi2 → β FeSi2 → α FeSi2, CsCl FeSi2 → β FeSi2 → α FeSi2 or β FeSi2 → α FeSi2. When the implantation parameter is increased to 60 kV, 4 × 10 17 ions / cm2, amorphous formation will occur, and the amorphous phase will crystallize into β FeSi2 phase after annealing. The phase transformation becomes amorphous → β FeSi2 → α FeSi2.With the gradual increase of annealing temperature, the silicide particles grow up gradually and grow into the matrix. At a certain annealing temperature, the silicide layer shrinks and breaks into small islands, which makes the interface of the silicide silicon flat In addition, the study on the orientation relationship of β FeSi2 Si interface shows that it is difficult to form high quality β FeSi2 thin films on Si substrate because of the non-coherent orientation Deposit formation, formation of twins and interfacial defects resulting