提出了一种新颖的基于三维掩膜的硅各向异性腐蚀工艺,即利用深反应离子刻蚀、湿法腐蚀等常规体硅刻蚀工艺和氧化、化学气相沉积(CVD)等薄膜工艺制作出具有三维结构的氧化硅(SiO2)或氮化硅(Si3N4)薄膜,以该三维薄膜作为掩膜进行各向异性腐蚀,该工艺可以应用于MEMS微悬空结构的制作。利用该工艺成功地在单片n-Si(100)衬底上完成了一种十字梁结构的释放,并对腐蚀的过程和工艺参数进行了研究。 A novel silicon-based anisotropic etching process based on three-dimensional mask is proposed, that is, a conventional bulk silicon etching process such as deep reactive ion etching and wet etching and a thin film process such as oxidation and chemical vapor deposition (CVD) A three-dimensional silicon oxide (SiO 2) or silicon nitride (Si 3 N 4) thin film is anisotropically etched using the three-dimensional film as a mask. The process can be applied to the fabrication of a MEMS micro-floating structure. A kind of cross-beam structure was successfully released on the monolithic n-Si (100) substrate by using this technique. The corrosion process and process parameters were studied.