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自从1948年 Shockley 发明晶体管以来,半导体元件已愈来愈获得重要意义,它导致了主要是通讯技术和强电技术方面的革命性发展。对半导体材料性质的进一步研究(首先是锗,其后是硅),为这一发展提供了基础。半导体元件的特性是由所采用的半导体材料所决定的。因此,进一步研究半导体材料是发展具有更良好的或完全新的特性的半导体元件的关键。碳化硅(SiC)是一种适用于新技术用途的半导体材料,其显著特性优点是:耐高温;禁带宽;化学稳定性好和硬度高。为了充分利用材料的半导体性质,必须要将其制成单晶形式,同时纯度要特别高。碳化
Semiconductor components have gained significance ever since Shockley invented the transistor in 1948, leading to a revolutionary evolution of primarily communications and power technologies. Further research into the nature of semiconductor materials (germanium first followed by silicon) provides the basis for this development. The characteristics of the semiconductor element are determined by the semiconductor material used. Therefore, further research on semiconducting materials is the key to developing semiconductors with better or completely new properties. Silicon carbide (SiC) is a semiconductor material suitable for new technical applications. Its salient features and advantages are: high temperature resistance, forbidden bandwidth, good chemical stability and high hardness. In order to take full advantage of the semiconducting nature of the material, it is necessary to make it into the form of a single crystal, with particularly high purity. Carbonization