Diluted magnetic semiconductors (DMSs) have attracted much attention for their potential applications in spintronic devices.[1-4] Over the past decades,many studies have focused on Ⅲ-Ⅴ based DMS materials,such as Mn-doped GaAs.[5,6] Although the identification of the origin and mechanism of ferromagnetism has been well established and is generally believed to be hole-mediated magnetic ordering,the Curie temperatures Tc of these materials are far below room temperature (RT),[6] which limits their applications in commercial products.Since Dietl et al.[7] first theoretically predicted RT ferromagnetism in Mn-doped ZnO,numerous diluted magnetic oxide systems including ZnO,[8] TiO2,[9] and In2O3[10-13]have been proven to exhibit RT ferromagnetic behavior.Among them,In2O3-based DMSs has attracted considerable interest because of their high solubility of transition metal ions,excellent electrical conductivity,and high optical transparency.[10-12,14] Philip et al.