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介绍掺N磷化镓的二次液相外延工艺。衬底放置在滑块式石墨舟中,以氨作N源、过补偿法制备p—n结。氨以201银催化剂吸附后,用H_2携带之。n型层用G a熔池里掺Te的GaP,从920→860℃降温外延生长;p型层用气相掺Zn,从860→740℃降温外延生长。降温速率为1℃/分,采用自制的数模式恒速降温仪自动控制。试验表明,920℃开始降温生长的表面形态比1020℃生长的更为平整光亮。文中也讨论了系统漏气和氢气含水量增高对外延片质量的影响;衬底载流子浓度与外延片发光电压、以及H_2中含氨量与发光二极管峰值波长的关系。为了增加外延片表面Zn受主的浓度和降低Zn料的消耗,提出了改进外延生长管内Zn源管道的设计。
The introduction of N-doped gallium phosphide secondary liquid phase epitaxy process. The substrate was placed in a slider-type graphite boat with ammonia as the N source and p-n junction was prepared by overcompensation. Ammonia to 201 silver catalyst adsorption, carried by H_2. The n-type layer is epitaxially grown from 920 → 860 ° C using Ga-doped Ga in the molten pool of Ga, while the p-type layer is doped with Zn in the vapor phase and epitaxially grown from 860 → 740 ° C. The cooling rate of 1 ℃ / min, using a self-made digital mode constant temperature desiccator automatic control. Experiments show that the surface morphology of the initial cooling growth at 920 ℃ is more smooth than that at 1020 ℃. The effects of system leakage and hydrogen content on the quality of the epitaxial wafer are also discussed. The relationship between substrate carrier concentration and epitaxial wafer luminescence voltage, and the content of ammonia in H2 and the peak wavelength of the LED are also discussed. In order to increase the concentration of Zn acceptor on the surface of epitaxial wafer and reduce the consumption of Zn material, the design of Zn source tube in epitaxial growth tube was proposed.