Oxide semiconductor alloys of x(LiGaO2) 1/2-(1-x) ZnO were fabricated by the solid state reaction betweenβ-LiGaO2 and ZnO and rf-magnetron sputtering.For the solid state reaction,the wurtzite-type single phases were obtained in the composition range of x≤0.38.The formation range of the alloys was wider than that of the(Mg1-xZnx) O system,because the β-LiGaO 2possesses a wurtzite-derived structure and approximately the same lattice constants with ZnO.The electrical resistivity and energy band gap of the 0.38(LiGaO2) 1/2-0.62ZnO alloyed ceramic were 0.45-cm and 3.7 eV,respectively,at room temperature.For the alloying by sputtering,the films consisting of the wurtzite-type single phase were obtained over the entire composition range of x(LiGaO2) 1/2-(1-x) ZnO.The energy band gap was controllable in the range from 3.3 to 5.6 eV.For the as-deposited film fabricated using the 0.4(LiGaO2) 1/2-0.6ZnO alloyed ceramic target,the energy band gap was 3.74 eV,and the electrical resistivity,carrier density and the Hall mobility at room temperature were 3.6-cm,3.4×1017 cm-3and 5.6 cm 2 V-1s-1,respectively. Oxide semiconductor alloys of x (LiGaO2) 1 / 2- (1-x) ZnO were fabricated by the solid state reaction between β-LiGaO2 and ZnO and rf-magnetron sputtering. For the solid state reaction, the wurtzite-type single phases were obtained in the composition range of x ≦ 0.38. The formation range of the alloys was wider than that of the (Mg1-xZnx) O system, because of β-LiGaO2 possesses a wurtzite-derived structure and approximately the same lattice constants with ZnO. electrical resistivity and energy band gap of the 0.38 (LiGaO2) 1 / 2-0.62ZnO alloyed ceramic were 0.45-cm and 3.7 eV, respectively, at room temperature. For the alloying by sputtering, the films consisting of the wurtzite-type single phase was obtained over the entire composition range of x (LiGaO2) 1 / 2- (1-x) ZnO. The energy band gap was controllable in the range from 3.3 to 5.6 eV. For the as-deposited film fabricated using the 0.4 ) 1 / 2-0.6ZnO alloyed ceramic target, the energy band gap was 3.74 eV, and the electrical resistivity, carr ier density and the Hall mobility at room temperature were 3.6-cm, 3.4 × 10 17 cm -3 and 5.6 cm 2 V-1 s-1, respectively.