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采用碱性抛光液对铝栅进行化学机械抛光(CMP),在pH值大于8.3时会发生析氢反应,表面产生氢气泡,在铝栅表面留下大量蚀坑缺陷,降低平坦化效果,严重影响芯片器件性能的完整性和可靠性。对铝栅在碱性介质CMP条件下的析氢反应机理及控制理论进行了深入探究。通过接触角实验和静态腐蚀实验,并结合金相显微镜观察静态腐蚀后表面状态,发现抛光液中加入FA/O I非离子型表面活性剂可有效抑制碱性环境中铝栅CMP析氢腐蚀。通过实验得出,当碱性抛光液中FA/O I非离子型表面活性剂的体积分数为1.5%时,抛光液的表面张力最小,接触角最小,抑制析氢腐蚀效果最好。
Alkaline polishing liquid is used to perform chemical mechanical polishing (CMP) on the aluminum grid. Hydrogen evolution reaction occurs when the pH value is higher than 8.3. Hydrogen bubbles are formed on the surface of the aluminum grid to leave a large number of pit defects on the surface of the aluminum grid to reduce the planarization effect and seriously affect Chip device performance integrity and reliability. Hydrogen evolution reaction mechanism and control theory of aluminum grid in alkaline medium are studied in depth. Through the contact angle experiment and static corrosion test, combined with the metallographic microscope to observe the surface state after static etching, it was found that adding FA / O I nonionic surfactant into the polishing solution can effectively inhibit the hydrocracking of aluminum gate CMP in alkaline environment. The experimental results show that when the volume fraction of FA / O I nonionic surfactant in alkaline polishing solution is 1.5%, the surface tension of slurry is the smallest, the contact angle is the smallest, and the inhibition of hydrogen evolution is the best.