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在高压液封切克劳斯基(LEC)方法生长InP晶体过程中,孪晶出现是一个比较突出的问题。但是选择合理的热场、注意液封剂B_2 O_3脱水条件、使用化学配比的InP多晶料,在<111>P面生长方向的情况下,可重现地制备无孪生磷化铟晶体。而且引晶后,晶体放肩斜度与生长轴夹角达25°左右时仍可得完整锭单晶。若上述条件均能同时满足,生长参数相对稳定,则在拉制直径为25—30毫米、重160克左右的晶体时,单晶出现几率大于70％。并用相应的条件生长了直径为35—38毫米、重300—320克的单晶。 上述掺杂晶体代表性电学性质为:掺Sn-InP N_D-N_A=2.5×10~(18)/厘米~3,μ_(300)=1.74×10~3厘米~2/伏·秒。掺Fe-InP p=9×10~7欧姆·厘米。以掺Sn—InP为衬底,制作了双异质结GaInAsP/InP红外发光二极管,初步结果为:当工作电流为100毫安时,输出功率可达0.6毫瓦以上,发射波峰为1.26微米。并对磷化铟单晶进行了光致发光及位错测试。
Twinning appears to be a prominent issue during the growth of InP crystals by the high pressure liquid seal Czochralski (LEC) method. However, choosing a reasonable thermal field, paying attention to dehydration condition of B 2 O 3 liquid sealant, and using InP polycrystalline material with stoichiometric ratio can reproducibly produce unpaired indium phosphide crystals in the growth direction of <111> P plane. And after seeding, the angle between the crystal and the growth axis of the shoulder is about 25 °, so the complete ingot single crystal can still be obtained. If all of the above conditions can be satisfied at the same time and the growth parameters are relatively stable, the probability of appearance of single crystals is greater than 70% when drawing crystals with a diameter of 25-30 mm and a weight of about 160 g. And grown with the corresponding conditions diameter 35-38 mm, weighing 300-320 grams of single crystal. The representative electrical properties of the doped crystal are as follows: Sn-InP N_D-N_A = 2.5 × 10-18 / cm -3, μ 300 = 1.74 × 10 -3 cm -2 / V · sec. Fe-doped InP p = 9 × 10 ~ 7 ohm · cm. A double heterojunction GaInAsP / InP infrared LED was fabricated by doping Sn-InP substrate. The preliminary results showed that the output power was up to 0.6 mW and the emission peak was 1.26 μm when the operating current was 100 mA. Photoluminescence and dislocation tests were carried out on indium phosphide single crystals.