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一、引 言 GaInAsP/InP双异质结材料和器件是当前光通讯研究中人们很感兴趣的一个领域.它具有以下几个特点:(1)有源层禁带可以在相应波长0.96-1.67μm范围内任意选择,适合于低损耗、低色散的光纤传输.(2)能够用异质结阻挡位错的延伸,而本身又可以晶格匹配地生长,不引进失配位错.(3)在有源层达到高效率的发射复合,然后通过透明的InP层,保证有效地取出发射光.(4)InP的热导性较好.(5)该异质结材料不易氧化,生长工艺容易稳定.
I. INTRODUCTION GaInAsP / InP double heterojunction materials and devices are one of the most interesting fields in the field of optical communications. They have the following features: (1) The forbidden band of the active layer can be formed at the corresponding wavelength of 0.96-1.67μm (2) can use the heterojunction to block the extension of dislocation, which in turn can grow in lattice matching without introducing misfit dislocations. (3) In the active layer to achieve efficient emission recombination, and then through the transparent InP layer, to ensure the effective removal of the emitted light. (4) InP thermal conductivity is better. (5) The heterojunction material is not easy oxidation, growth process easy stable.