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用静电放电方法研究硒碲材料中卤族元素掺杂对空穴陷阱的影响。结果表明卤族元素掺杂增加了硒碲材料的光量子效率η和光生载流子漂移长度μτE.而体陷阱积分密度 N_(?)降低以及空穴深陷阱态分布减小,说明硒碲材料中卤族元素掺杂使得浅空穴陷阱密度增大。
Effect of Halogen Doping on Hole Traps in Selenium and Tellurium Materials by Electrostatic Discharge Method. The results show that the doping of halogens increases the photon quantum efficiency η and photo carrier drift length μτE of selenium and tellurium materials, and decreases the integral density N_ (?) Of the bulk traps and decreases the distribution of deep hole traps. Doping of the halogen elements increases the trap density of shallow holes.