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在Ga-AsCl_3-H_2系统中用金属Zn为掺杂剂,研究了气相外延GaAs时Zn的掺入和行为。GaAs中Zn的分配系数和空穴浓度分别为10和大于10~(20)cm~(-3),它们都比掺Cd的GaAs大2—3个数量级。这保证了用以制备光阴极材料所需的高空穴浓度的P-GaAs。结合掺Zn和掺s,已重复制得界面良好的P-n结构材料。
In the Ga-AsCl 3 -H 2 system, metal Zn is used as a dopant to study the incorporation and behavior of Zn in the vapor-phase epitaxial GaAs. The distribution coefficient and hole concentration of Zn in GaAs are 10 and more than 10 ~ (20) cm ~ (-3), respectively, which are 2-3 orders of magnitude larger than that of Cd-doped GaAs. This ensures the high hole concentration of P-GaAs needed to prepare the photocathode material. In combination with Zn doping and doping s, a well-structured P-n structure material has been obtained.