根据SiGe材料的物理特性,提出了一种新有源层材料的三维CMOS集成电路.该三维CMOS集成电路前序有源层仍采用Si材料,制作nMOS器件;后序有源层则采用SiGe材料,以制作pMOS器件.这样,电路的本征性能将由SinMOS决定.使用MEDICI软件对Si-SiGe材料三维CMOS器件及Si-SiGe三维CMOS反相器的电学特性分别进行了模拟分析.模拟结果表明,与Si-Si三维CMOS结构相比,文中提出的Si-SiGe材料三维CMOS集成电路结构具有明显的速度优势. According to the physical properties of SiGe material, a new CMOS active layer material CMOS integrated circuit is proposed. The active layer of the 3D CMOS integrated circuit still uses Si material to fabricate nMOS device, and the subsequent active layer uses SiGe material To fabricate pMOS devices. In this way, the intrinsic performance of the circuit will be determined by SinMOS.The electrical characteristics of Si-SiGe 3D CMOS devices and Si-SiGe 3D CMOS inverters are simulated respectively using MEDICI software.The simulation results show that, Compared with the Si-Si three-dimensional CMOS structure, the proposed Si-SiGe three-dimensional CMOS integrated circuit structure has obvious speed advantage.