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为了克服电子束蒸镀技术的不足,提高蒸镀薄膜与基体的膜基结合力,通过增加射频线圈的方法,在电子束蒸镀沉积过程中实现了射频自体辉光放电。研究了放电参数对射频辉光放电反射功率的影响规律,结果表明采用3匝直径82mm的射频线圈条件下,最佳放电距离为100cm。电子束流在160mA以上时,起辉较容易,但是电子束流大于200mA后,蒸镀的膜层容易脱落。通过静电探针分析发现,放电产生的等离子体中离子密度高于1.0×1010atom/cm3,射频功率的增大提高了真空室中各个位置处的离子密度,尤其是线圈中心位置,导致了真空室中离子密度径向位置的不均匀性。当射频功率为170W时,各位置的离子密度急剧增加。
In order to overcome the deficiencies of electron beam evaporation technology and improve the film-based adhesion between the deposited film and the substrate, an RF self-glow discharge is achieved during the electron beam deposition by adding a radio frequency coil. The influence of discharge parameters on the reflected power of RF glow discharge was studied. The results show that the optimum discharge distance is 100 cm with 3 turns of RF coil with diameter of 82 mm. When the electron beam current is above 160mA, it is easier to initiate the electron beam. However, when the electron beam current is larger than 200mA, the deposited film layer is easily peeled off. Electrostatic probe analysis showed that the ion density in the plasma generated by the discharge was higher than 1.0 × 1010atom / cm3. The increase of RF power increased the ion density at each position in the vacuum chamber, especially the center of the coil, resulting in the vacuum chamber Inhomogeneous ion density radial position. When RF power is 170W, the ion density at each position increases sharply.