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为提高高k/Ge MOS器件的界面质量,减小等效氧化物厚度(EOT),在high-k介质和Ge表面引入薄的TaON界面层。相对于没有界面层的样品,HfO2/TaON叠层栅介质MOSFET表现出低的界面态密度、低的栅极漏电和较好的输出特性。因此利用TaON作为Ge MOS器件的界面钝化层对于获得小的等效氧化物厚度和高的高k/Ge界面质量有着重要的意义。
To improve the interface quality of high-k / Ge MOS devices and reduce the equivalent oxide thickness (EOT), a thin TaON interface layer is introduced on the high-k dielectric and Ge surfaces. HfO2 / TaON stacked gate dielectric MOSFETs show lower interfacial density, lower gate leakage and better output characteristics than those without interfacial layer. Therefore, using TaON as an interface passivation layer for a Ge MOS device is of great importance for obtaining a small equivalent oxide thickness and a high high-k / Ge interface quality.