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绝缘栅双极型晶体管(IGBT)多用于感性负载下的电力电子线路中,这导致了在器件关断过程中集电极电压上升阶段时集电极电流仍然保持在额定电流值,从而造成大量的能量损耗.集电极电压的上升过程可以看作是栅极电流对集电极与栅极之间的电容(即米勒电容)充电的过程.本文提出一种解析模型,通过计算米勒电容值随时间的变化来预测IGBT在关断过程中集电极电压值的变化.在对米勒电容的计算上,不仅考虑了电容值与其端电压之间的依赖关系,同时也考虑到关断过程中耗尽区存在的大量载流子对电容值的影响,使得模型更加准确.最后,运用数值计算仿真软件对绝缘栅双极型晶体管的关断过程进行了模拟,对本文提出的模型进行了验证.仿真结果与模型计算结果显示出良好的一致性.
Insulated Gate Bipolar Transistors (IGBTs) are often used in inductive load power electronics, which results in the collector current remaining at rated current during the rise of the collector during device turn-off, resulting in a large amount of energy Loss.The process of collector voltage rise can be regarded as the process of gate current charging the capacitor (ie, Miller capacitance) between the collector and the gate.This paper presents an analytical model by calculating the Miller capacitance with time Changes in the IGBT to predict the collector voltage in the shutdown process changes in the calculation of Miller capacitance, not only to consider the capacitor voltage dependence of its terminal voltage, but also taking into account the depletion of the shutdown process The influence of large number of carriers existing in the region on the capacitance value makes the model more accurate.Finally, the simulation process of the insulated gate bipolar transistor is simulated by numerical simulation software, and the model proposed in this paper is verified. The results show good agreement with the model calculations.