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用化学腐蚀法在GaAs上制备边缘为楔形的SiO_2掩蔽层。通过掩蔽层的窗口注入磷离子,得到从晶态区过渡到非晶态区的样品。用JEM200CX透射电子显微镜沿[100]方向观察过渡区的{220}晶格象。
Preparation of a wedge-shaped SiO 2 masking layer on GaAs by chemical etching. Phosphorous ions are implanted through the masking window to obtain a sample that transitions from the crystalline region to the amorphous region. The {220} lattice of the transition region was observed along the [100] direction with a JEM200CX transmission electron microscope.