本文研究由射频溅射法制备的非晶InP薄膜的光学性质及其退火效应.薄膜光学性质由椭圆偏振光谱法测量.退火是在300、350、400、420℃的温度下于密闭容器中进行.结果表明,经400℃退火后,薄膜光学性质发生明显改变,反映薄膜已由非晶态转变为多晶态.指出用光学性质的改变来描述晶化过程可能更加灵敏. In this paper, the optical properties of amorphous InP films prepared by radio frequency sputtering and their annealing effects were investigated.The optical properties of the films were measured by ellipsometry.The annealing was carried out in sealed containers at 300, 350, 400 and 420 ℃ The results show that after annealing at 400 ℃, the optical properties of the films change significantly, which indicates that the films have been transformed from amorphous to polycrystalline. It is pointed out that it may be more sensitive to describe the crystallization process by changing the optical properties.