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本文给出了所研制的双扩散垂直沟道3DOV型高频功率场效应晶体管的设计原理、公式和基本工艺要则。列举了器件的主要性能和试用情况。器件具有高频性能好,可使用动态范围大、栅击穿电压高等特点。
This paper presents the design principle, formula and basic technology of double-diffused vertical channel 3DOV high-frequency power field-effect transistor. List the main performance of the device and trial conditions. The device has high-frequency performance, can use a large dynamic range, high gate breakdown voltage characteristics.