一、引言 半导体器件制作的基本任务之一是控制杂质分布。这是因为在对表面和晶格缺陷进行适当控制之后,杂质分布的控制就成为主要的问题,它决定着器件的各种性能,因而也就决定集成电路的性能。 杂质分布的控制是一个涉及范围十分广泛的问题,其中包括扩散源的物理化学问题,杂质的气相和固相传输问题,硅与杂质相互作用的物理化学问题,硅和杂质的氧化问题,杂质在Si/SiO_2两相中的分凝效应,杂质在硅中的扩散等多方面的课题。为控制杂质的分布,就有必要弄清它们的规律性和相互作用的规律性。虽然其中某些问题至今还没有完全搞清楚,但大多数问题是与工艺问题相联系的,或 I. INTRODUCTION One of the basic tasks in the fabrication of semiconductor devices is to control the distribution of impurities. This is because control of impurity distribution becomes a major issue after proper control of surface and lattice defects, which determine the performance of the device and hence the performance of the integrated circuit. The control of impurity distribution is a very wide range of issues including the physicochemical problems of diffusion sources, the gas and solid phase transport problems of impurities, the physicochemical problems of the interaction between silicon and impurities, the oxidation of silicon and impurities, The segregation effect of Si / SiO 2 two phases, the diffusion of impurities in silicon, and many other issues. In order to control the distribution of impurities, it is necessary to understand their regularity and the law of interaction. Although some of these problems have not yet been fully understood, most of them are related to the problem of technology or