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针对新型阻变存储器(RRAM)工艺良率不高的问题,提出了一种新型的修复解决方案,该方案基于阻变单元的特殊性能,即初始状态为高阻,经过单元初始化操作过程后转变为低阻。利用这样特性的阻变单元作为错误检测位、冗余单元作为修复位,提出了三种不同的组织结构来实现修复操作。三种结构由于主存储器、检验位存储器及冗余存储器的组织方式不同,达到了不同的冗余存储器利用率。最后,通过数学分析可以证明,该方案在利用了较少冗余存储器的条件下,可以将阻变存储器的错误率普遍降低10～30倍,实现了较好的修复效果。
Aiming at the problem of low yield of RRAM, a new solution is proposed. The scheme is based on the special performance of RRU, that is, the initial state is high resistance. After the process of unit initialization operation is changed, Low resistance. Using such characteristics of the resistance change unit as the error detection bit, redundancy unit as a repair bit, put forward three different organizational structures to achieve the repair operation. The three architectures achieve different redundancy memory utilization due to the different ways of organizing main memory, check bit memory and redundant memory. Finally, through mathematical analysis, it can be proved that this scheme can reduce the error rate of resistive memory by 10 ~ 30 times in general, and achieve a better repair effect when less redundant memory is used.