制备了人工opal晶体模板,运用MOCVD方法在SiO2人工opal球体间填充了高折射率的InP晶体,选择了MOCVD生长InP的有关参数.样品扫描电子显微镜及反射谱结果检测显示,InP晶体在二氧化硅间隙中的生长是均匀的,具有较好的结晶质量;高介电常数的InP的填充使人工欧泊光子晶体的光子禁带效应增强,反射峰移向长波长区.光学特性检测结果与理论计算值得到较好的符合. The artificial opal crystal template was prepared and the MOCVD method was used to fill the artificial opal sphere with high refractive index InP crystal.The relevant parameters of MIPVD growth InP were selected.The detection results of the sample by scanning electron microscopy The growth of silicon interstitial is uniform and has good crystal quality. The filling of the high dielectric constant InP makes the photonic band gap effect of artificial op-amp photonic crystal enhanced and the reflection peak shifts to the long wavelength region. The theoretical calculation value is in good agreement.