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使用射频磁控溅射法成功制备了不同掺杂浓度(0—7at.%)的ZnO:Ni薄膜.X射线衍射的θ-2θ和摇摆曲线扫描结果表明,5at.%Ni掺杂ZnO薄膜具有沿c轴方向最佳的择优取向生长特性,(002)衍射峰向大角度方向移动揭示了Ni杂质被掺入ZnO晶格中占据Zn位.ZnO:Ni薄膜具有较好的可见光透明特性,拟合发现薄膜的光学带隙随Ni掺杂量的增加由3.272eV线性降低到3.253eV.未掺杂薄膜在550nm处呈现出一个绿色发光峰,掺入Ni杂质后薄膜主要表现了以430nm为中心的蓝色发光,分析认为它们分别源于薄膜中O空位和Zn填隙缺陷发光.
The films of ZnO: Ni with different doping concentration (0-7at.%) Were successfully prepared by RF magnetron sputtering.The results of θ-2θ and rocking curve of X-ray diffraction show that the 5at.% Ni doped ZnO films have The preferred orientation growth characteristic along the c-axis is that the movement of the (002) diffraction peak to a large angle reveals that the Ni impurity is incorporated into the ZnO lattice to occupy the Zn site. The ZnO thin film has good visible light transparency characteristics. The optical band gap of co-occurring films decreases linearly from 3.272eV to 3.253eV with the increase of Ni doping.The un-doped films show a green luminescence peak at 550nm, and the films mainly contain 430nm Blue luminescence analysis that they are derived from the O-vacancies in the film and Zn interstitial defects luminescence.