据日本《电视学会志》1991年第9期报道,日本制作所已制成能像GaAs HBT那样高速和低温工作的硅晶体管。这种硅晶体管为极普通的npn型结构,能在比以前低200℃的温度下(760℃)形成最上面的发射极电极,淀积n型非晶硅,经热处理后作成多晶硅。器件的电流增益 According to Japan’s “TV Institute” No. 9 of 1991 reported that the Japanese production has been made as fast as GaAs HBT and low-temperature silicon transistors. This silicon transistor is an extremely npn-type structure capable of forming the uppermost emitter electrode at a temperature of 200 ° C (760 ° C) lower than before and depositing n-type amorphous silicon which is heat-treated to form polysilicon. Current gain of the device