This paper reviews the rapid progress in the field of high-throughput modeling based on the Materials Genome Initia-tive, and its application in the discovery a
An ultra-high voltage 4H-silicon carbide (SiC) gate tu-off (GTO) thyristor for low switching time is proposed and analyzed by numerical simulation.It features a
Data-mining techniques using machine leaing are powerful and efficient for materials design,possessing great potential for discovering new materials with good c