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采用射频磁控反应溅射法,Ar气为溅射气体,N2气为反应气体,用高纯石墨靶在Si(100)片上制备了掺氮类金刚石薄膜,采用X射线光电子能谱(XPS)、拉曼光谱(Raman)、扫描电子显微镜(SEM),表征了掺氮类金刚石薄膜的微观结构、表面及截面形貌。Raman光谱结果表明,制备的掺氮类金刚石薄膜中含有特征峰D峰和G峰,分别位于1339.2 cm-1、1554.6 cm-1均向低波数段频移,具有典型的类金刚石结构特征;XPS光谱的C1s和N1s的芯能级证实了薄膜中的碳氮进行了化合,形成了C—N、C=N、C≡N,说明薄膜中形成了非晶碳氮结构;同时SEM结果表明实验所制备的薄膜表面均匀、致密、光滑,从截面照片观察,薄膜与衬底结合紧密,薄膜的厚度大约为150nm。
The RF magnetron reactive sputtering method was used. The Ar gas was the sputtering gas and the N2 gas was the reactive gas. The nitrogen doped diamond films were prepared on Si (100) by high purity graphite target. X - ray photoelectron spectroscopy (XPS) , Raman spectroscopy (Raman) and scanning electron microscopy (SEM). The microstructure, surface and cross-sectional morphology of the films were characterized. The results of Raman spectroscopy show that the D-doped and G-peaked peaks of the diamond-like carbon-doped diamond-like carbon films are at 1339.2 cm-1 and 1554.6 cm-1, respectively, with a typical DLC structure. XPS The C-N, C = N and C≡N values of the carbon and nitrogen in the films were confirmed by the energy levels of C1s and N1s in the spectra, indicating that amorphous carbonitride was formed in the films. SEM results showed that the experimental The prepared film surface is uniform, dense and smooth. From the cross-sectional photograph observation, the film is closely combined with the substrate, and the thickness of the film is about 150 nm.