对具有侧向籽晶的绝缘衬底上的多晶硅薄膜的连续氩离子激光再结晶进行了研究.实验结果显示出明显的籽晶外延效果,外延的最大晶粒已达 50μm× 40μm,晶向与籽晶一致,均为<100>.无侧向籽晶的多晶硅膜激光再结晶后晶粒也能长大,但是晶粒的晶向是随机的. Continuous argon ion laser recrystallization of polycrystalline silicon thin film on an insulating substrate with lateral seed crystals was studied.The experimental results show a significant effect of seed epitaxy, the maximum grain size of the epitaxial growth reaches 50μm × 40μm, The seeds are identical, all <100.> Polysilicon films without lateral seed crystals can also grow after laser recrystallization, but the crystal orientation is random.