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在SMF-800 石墨第一壁化学腐蚀温度特性的实验研究基础上,进一步测试了G3 石墨、SMF-800 高纯石墨和硼化石墨,以及SiC涂层等在1.3μA/3keV 氘离子束轰击下化学腐蚀的温度特性。从中优选出C2B10H12 氦辉光放电法制取的SMF-800 石墨硼化层,它具有最佳的抗化学腐蚀性能。其CD4 产额较SMF-800 高纯石墨的降低一个数量级以上,CD4 产额峰值温度下移至650K附近。用小角度转动样品法,初步观察了氘离子束轰击下石墨释放CD4 的角分布特性,为托卡马克先进偏滤器实验中确立CD4 辐射区的定位及其控制等可行性进行了探索
On the basis of the experimental study on the temperature dependence of chemical etching on the first wall of SMF-800 graphite, further tests were performed on G3 graphite, SMF-800 high purity graphite and graphite boride, and SiC coating at 1.3μA / 3keV deuteron beam bombardment Under the chemical corrosion temperature characteristics. Preferred from the C2B10H12 helium glow discharge prepared SMF-800 graphite boronization layer, it has the best chemical corrosion resistance. Its CD4 production was more than an order of magnitude lower than that of SMF-800 high-purity graphite, and its CD4 yield peaked at around 650K. With the small-angle rotation sample method, the angular distribution characteristics of CD4 released by deuteron beam bombardment were initially observed, and the feasibility of establishing the CD4 radiation zone positioning and controlling in the Tokamak advanced divertor experiment was explored