一种MIS结构,其中半导体为适当掺杂的ZnSe,呈现出开关和存储特性。在正向和反向偏压两种情况下,这一结构也发射光,其波长具有所掺杂质的特征。虽然对器件的工作原理尚未完全了解,开关作用仍能归结于电荷从半导体中深杂质能级到绝缘层中的转移。 An MIS structure in which the semiconductor is suitably doped ZnSe exhibits switching and storage characteristics. In both the forward and reverse bias cases, this structure also emits light with a wavelength that has the characteristic of being doped. Although the working principle of the device is not yet fully understood, the switching effect can still be attributed to the charge transfer from the deep impurity level in the semiconductor to the insulating layer.