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为了减小多晶硅中晶界、位错、微缺陷和过渡族杂质对多晶硅太阳电池效率的不利影响,采用兆瓦级可调谐TEA CO_2高功率激光器输出的激光脉冲对硅片进行预处理。使用10μm带不同支线的脉宽约为200 ns红外激光脉冲在20 mm汞柱的氢气氛中对多晶硅片辐照不同的脉冲数,制得25个样品;去除样品的损伤层后,用S2T-2A四探针测试仪测试了各组样品的电阻率,发现所有样品电阻率都有不同程度的降低,其中经P18和P20支线脉冲辐照3个脉冲的样品电阻率下降幅度最大,下降幅度最高达到50%;用高频光电导少子寿命测试仪测试样品的少子寿命,发现所有样品少子寿命都变长,其中经P18和P20辐照三个脉冲后的样品少子寿命增加幅度最大,增幅最高达30%。
In order to reduce the adverse effect of grain boundary, dislocations, microdefects and transitional impurities on the efficiency of polycrystalline silicon solar cells in polycrystalline silicon, a laser pulse output from a megawatt tunable TEA CO_2 high power laser was used to pretreat the silicon wafer. The pulse width was about 200 ns with different branch lines of 10 μm. The laser pulses were pulsed with 20 mm Hg in different atmospheres for different numbers of pulses to obtain 25 samples. After removing the damaged layer of samples, 2A four-probe tester measured the resistivity of each sample and found that all samples have different degrees of resistivity reduction, of which P18 and P20 branch pulse pulsed 3 pulse samples the largest decrease in resistivity, the highest decline Reaching 50%. Using the high-frequency photoconductivity minority life tester to test the minority-lifetime of the sample, it was found that all the samples had longer life-span. The samples with the three pulses irradiated by P18 and P20 had the largest increase and the largest increase 30%.