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一维(1D)半导体纳米线在纳米电子学和纳米光子学中表现出色.然而,纳米线晶体管的电特性对纳米线与衬底之间的相互作用非常敏感,而优化器件结构可以改善纳米线晶体管的电学和光电检测性能.本文报道了通过一步式光刻.“,”One-dimensional(ID)semiconductor nanowires have shown outstanding performance in nano-electronics and nano-photonics.However,the electrical properties of the nanowire transistors are very sensit-ive to interactions between the nanowires and substrates.Optimizing the device structure can improve the electrical and photodetection performance of nanowire transistors.We report a suspended In2O3 nanowire transistor fabricated by one-step lithography,showing a high mobility of 54.6 cm2V-ls-1 and a low sub-threshold swing of 241.5 mVdec-1.As an ultraviolet photodetector,the phototransistor shows an extremely low dark current(-10-13 A)and a high responsivity of 1.6xl05 A?W-1.This simple and effective method of suspending the channel material of a transistor can be widely used in manufacturing high-performance micro-nano devices.