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本文以电荷泵技术为测量手段，结合数值计算，提出了一种新的测量界面态横向分布的方法．与传统方法相比具有理论模型较完善、测量中不引入新的蜕变、易于实现的特点，适用于研究短沟道器件的热载流子蜕变效应．用该方法对１．２μｍＬＤＤ结构ｎ－ＭＯＳＦＥＴ进行了研究，得到了应力后漏端附近产生的界面态的横向分布以及应力后阈值电压、平带电压的变化，并能确定由于热电子注入产生的氧化层陷阱电荷的数量和位置
In this paper, charge pump technology is used as a measuring method, and a new method to measure the transverse distribution of interface states is proposed. Compared with the traditional method, it has the characteristics of perfect theoretical model, not introducing new metamorphism in the measurement, and easy to implement. It is suitable for studying hot carrier degeneration effect of short channel devices. The 1.2μmLDD structure n-MOSFET was studied by this method. The transverse distribution of the interface states generated near the drain terminal after stress and the change of the threshold voltage and the flat-band voltage after the stress were obtained. The amount and location of the oxide trap charge