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用常压MOCVD装置,制备了透射式GaAs光电阴极材料。发射层P-型GaAs掺杂浓度到10~(18)-10~(19)cm~(-3),少子扩散长度到4.02μm。AlGaAs层的Al组分含量到0.83,其吸收光谱长波限与设计值基本符合。利用此材料进行了阴极激活实验,制成了透射式GaAs光阴极。
Transmissive GaAs photocathode materials were prepared by atmospheric MOCVD. The doping concentration of P-type GaAs in the emitter layer is 10 ~ (18) -10 ~ (19) cm ~ (-3), and the diffusion length of minority carriers is 4.02μm. AlGaAs layer Al component content of 0.83, the absorption spectrum of the long wave limit and the design value basically. Cathode activation experiments were conducted using this material to produce a transmissive GaAs photocathode.