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本文报道了以SnCl_4为源a-SiSn:(Cl,H)的研制工作。该材料中Cl含量可通过改变衬底温度和射频功率调节,不显著地影响Sn的比例。掺入较小量的Sn可获得光学带隙较窄的材料,有利于减小材料的无序程度。
This paper reports the development of a-SiSn: (Cl, H) with SnCl_4 as the source. The Cl content in this material can be tuned by changing the substrate temperature and RF power without significantly affecting the Sn ratio. Incorporating a small amount of Sn gives a material with a narrow optical band gap, which helps to reduce the degree of disorder of the material.