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利用脉冲激光沉积(PLD)技术,通过一系列实验成功地制备出了近外延生长的Ba_(0.4)Sr_(0.6)TiO_2铁电薄膜。研究了衬底对Ba_(0.4)Sr_(0.6)TiO_3铁电薄膜外延质量的影响。从摇摆曲线的半高宽(FWHM)及原子力显微镜(AFM)图谱中可以看出,在铝酸锶钽镧(LAST)衬底上生长的薄膜,外延质量明显比失配度更小的钛酸锶(STO)衬底上生长的要好,并不是传统认为的晶格失配度越小越好,分析其原因主要是因为小的失配不利于应力的释放造成的。
The Ba_ (0.4) Sr_ (0.6) TiO_2 ferroelectric thin films grown by near-epitaxial growth were successfully fabricated by a series of experiments using pulsed laser deposition (PLD). The effect of substrate on the epitaxial quality of Ba_ (0.4) Sr_ (0.6) TiO_3 ferroelectric thin films was investigated. From the FWHM and AFM spectra of the rocking curve, it can be seen that the thin films grown on the LAST substrate of Lanthanum aluminate have a much better epitaxial mass than the mismatched titanic acid Strontium (STO) growth on the substrate is better, not the traditional lattice mismatch as small as possible, the analysis is mainly due to small mismatch is not conducive to the release of stress caused.