论文部分内容阅读
计算了HgCdTe/CdTe/Si(211)异质结构的应变和应力分布,发现对于生长方向为不具有对称特性的[211]晶向,由于弹性模量的各向异性,平行表面的两个晶向方向[1-1-1]和[01-1]的应变和应力分布存在差异,并且二者的曲率半径也具有相应特性。对于Si衬底厚度为500μm,CdTe缓冲层厚度为10μm,HgCdTe层厚度为10μm的异质结构,液氮温度77 K时衬底与外延层的应变均为负值,外延层和衬底的最大应力值均在界面处,外延层中均为张应力,Si衬底在靠近界面处为压应力,远离界面逐渐过渡为张应力,存在一个应力为零的中性轴位置。
The strain and stress distributions of HgCdTe / CdTe / Si (211) heterostructures were calculated and it was found that for the [211] orientation with no symmetry in the growth direction, two crystals of parallel surfaces due to the anisotropy of elastic modulus There are differences in the strain and stress distributions in directions [1-1-1] and [01-1], and the curvature radii of both have corresponding characteristics. For the Si substrate with a thickness of 500μm, the thickness of the CdTe buffer layer is 10μm and the thickness of the HgCdTe layer is 10μm, the strain of the substrate and the epitaxial layer is negative when the liquid nitrogen temperature is 77 K. The maximum of the epitaxial layer and the substrate The stress values are all at the interface, and the epitaxial layers are all tensile stress. The Si substrate is compressive near the interface, gradually leaving the interface as tensile stress, and there is a neutral axis with zero stress.