论文部分内容阅读
用MOCVD技术在高阻6H-SiC衬底上研制出了具有高迁移率GaN沟道层的AlGaN/AlN/GaN高电子迁移率晶体管(HEMT)结构材料,其室温和80K时二维电子气迁移率分别为1944和11588cm2/(V.s),相应二维电子气浓度为1.03×1013cm-2;三晶X射线衍射和原子力显微镜分析表明该材料具有良好的晶体质量和表面形貌,10μm×10μm样品的表面粗糙度为0.27nm.用此材料研制出了栅长为0.8μm,栅宽为1.2mm的HEMT器件,最大漏极饱和电流密度和非本征跨导分别为957mA/mm和267mS/mm.
The AlGaN / AlN / GaN high electron mobility transistor (HEMT) structure material with high mobility GaN channel layer was fabricated on high resistance 6H-SiC substrate by MOCVD. The two-dimensional electron gas migration The two-dimensional electron gas concentration was 1.03 × 1013cm-2. The three-crystal X-ray diffraction and atomic force microscopy analysis showed that the material has good crystal quality and surface morphology. The samples with 10μm × 10μm Of the surface roughness of 0.27nm.With this material developed a gate length of 0.8μm, gate width of 1.2mm HEMT devices, the maximum drain saturation current density and extrinsic transconductance were 957mA / mm and 267mS / mm .