,Ion source effect on the bond length of 4HeH+

来源 :中国物理(英文版) | 被引量 : 0次 | 上传用户:cpts
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
The bond length of 4HeH+ resulting from collision-induced destruction is measured at 1.4420 MeV using the Coulomb Explosion Technique. The measured bond length of 4HeH+ is 0.094±0.003nm. The bond length of 4HeH+ obtained with our radio frequency (RF) ion source is larger than that obtained with a duoplasmatron ion source at Argonne National Laboratory (ANL), but the bond lengths of H2+ and H3+obtained separately by ANL and by us with the two different ion sources are consistent with each other, which implies that there exists an ion source effect on the bond length of 4HeH+. The main reason why the 4HeH+ bond lengths obtained by the two different ion sources are different is also discussed.
其他文献
In a set of vibrating quasi-two-dimensional containers with the right-hand sidewall bent inward, three new segregation pattes have been identified experimentall
Density functional Theory (DFT) (B3p86) of Gaussian03 has been used to optimize the structure of Os2 molecule.The result shows that the ground state for Os2 mol
It is found that the field of the combined mode of the probe wave and the phase conjugate wave in the process of non-degenerate four-wave mixing exhibits higher
Stochastic resonance (SR) for bias signal modulation is studied in a single-mode laser system. By investigating a gain-noise model driven by correlated pump noi
The structure and magnetic properties of Y2Fe16Al compound have been investigated by means of x-ray diffraction and magnetization measurements. The Y2Fe16Al com
Some sufficient criteria have been established to ensure the global exponential stability of delayed cellular neural networks by using an approach based on dela
The defects associated with lead vacancies (VPb) in lead tungstate crystals (PbWO4) are investigated by the relativistic self-consistent discrete variational em
InGaN/GaN multi-quantum well structure with Mg-doped p-type GaN was grown by low-pressure metalorganic vapour phase epitaxy. After rapid-thermal-annealing at 70
株高是水稻最重要的农艺性状之一,直接影响水稻的抗倒伏和产量,大量矮杆突变体的出现引发了“第二次绿色革命”。剑叶是水稻最重要的功能叶,其形态特征关系到叶片间的通透性和光能利用率,直接影响水稻灌浆速度和籽粒饱满度。因此,了解水稻株高的遗传模式和剑叶发育的分子机理对水稻株型改良和丰产具有极其重要的意义。利用EMS诱变籼型水稻恢复系缙恢10号,从其后代鉴定到一个矮化剑叶基部特异卷曲突变体,暂命名为dcfl
Based on percolation theory and random telegraph signal (RTS) noise generation mechanism, a numerical model for RTS in deep submicron metal-oxide-semiconductor