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采用电子回旋共振等离子体增强金属有机物化学气相沉积 (ECR -PEMOCVD)技术 ,在c轴取向的蓝宝石即α Al2 O3( 0 0 0 1)衬底上 ,以氮化镓 (GaN)缓冲层和外延层作为初始层 ,分别以高纯氮气 (N2 )和三甲基铝 (TMAl)为氮源和铝源低温生长氮化铝 (AlN)薄膜 .并利用反射高能电子衍射 (RHEED)、原子力显微镜 (AFM)和x射线衍射 (XRD)等测量结果 ,研究了氢等离子体清洗、氮化和GaN初始层对六方AlN外延层质量的影响 ,从而获得解理性与α Al2 O3衬底一致的六方相AlN单晶薄膜 ,其XRD半高宽为 12弧分
The electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) technique was used to fabricate a c-axis oriented sapphire substrate, ie, Al 2 O 3 (0 0 0 1) substrate with a gallium nitride (GaN) Layer as the initial layer, AlN thin films were grown by low temperature N2 and TMA1 as nitrogen source and aluminum source respectively. The films were characterized by reflectance high energy electron diffraction (RHEED), atomic force microscopy AFM and XRD were used to study the influence of hydrogen plasma cleaning, nitridation and initial GaN layer on the quality of hexagonal AlN epitaxial layer. The results show that the hexagonal AlN Single crystal film, the XRD full width half-width of 12 arc minutes