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在室温～２００℃的不同温度下测量了薄膜全耗尽ＣＭＯＳ／ＳＩＭＯＸ（ＳｅｐａｒａｔｉｏｎｂｙＩｍｐｌａｎｔｅｄＯｘｙｇｅｎ）的Ｐ沟，Ｎ沟ＭＯＳＦＥＴ的亚阈特性曲线，分析了阈值电压和泄漏电流随温度的变化关系，并同相应的体硅器件作了比较。
The subthreshold characteristics of P-channel and N-channel MOSFETs of the fully depleted CMOS / SIMOX (Separationby Implanted Oxygen) were measured at different temperatures from room temperature to 200 ℃. The relationship between the threshold voltage and the leakage current with temperature was analyzed. The bulk of silicon devices were compared.