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在分子束外延的半导体材料中,普通存在着所谓卵形缺陷。其密度可以达到10~4/cm~2以上,而其尺寸也可以大到100μ~2。这对电子器件的制作,势必有极大的影响。所以对这类缺陷本质的分析和研究,对分子束外延材料质量的提高,具有一定的实际意义。样品是分子束外延的不掺杂的Ga_(1-x)Al_xAs,厚度约1μm。衬底为半绝缘砷化镓。实验是在JXA-3A电子探针x-射线显微分析仪上进行的。在测定组分的同时,也进行了阴极荧光形貌和阴极荧光光谱的测量。结果如下:1.Ga_(1-x)Al_xAs的x-值与阴极荧光光谱的关系:
In molecular beam epitaxy semiconductor materials, there are common so-called oval defects. Its density can reach 10 ~ 4 / cm ~ 2 above, and its size can also be as large as 100μ ~ 2. This is the production of electronic devices, bound to have a tremendous impact. Therefore, the analysis and research on the nature of such defects has certain practical significance for the improvement of material quality of molecular beam epitaxy. The sample is molecular beam epitaxy undoped Ga 1-x Al x AsAs with a thickness of about 1 μm. The substrate is semi-insulating gallium arsenide. Experiments were performed on a JXA-3A electron probe x-ray microanalyzer. In addition to the measurement of the components, the measurement of the cathode fluorescent morphology and the cathode fluorescent spectrum was also conducted. The results are as follows: 1. The relationship between the x-value of Ga_ (1-x) Al_xAs and the fluorescence spectrum of cathode: