利用显微光致发光技术,观测到了N含量为0 .1 %,0 .22 %,0 .36 %和0 .62 %的GaAsN合金的E_0, E_0+Δ_0和E+能级的光致发光峰.共振喇曼散射谱进一步证实了这些发光峰来源于所研究材料的本征能级,而不是来源于GaAsN合金中的一些局域激子发射.随着N组分的增加,E_0+Δ_0和E+能级分别向低能和高能方向移动并在N组分为0.16%时发生交错.文中提出了一种少量等电子掺杂和显微光致发光谱相结合的方法来直接观测半导体材料带边以上的跃迁能级,尽管光致发光谱通常没有用来观测这些能级位置. The photoluminescence peaks at E_0, E_0 + Δ_0 and E + levels of GaAsN alloys with N content of 0.1%, 0.22%, 0.36% and 0.62% were observed by using photoluminescence .Resonant Raman scattering spectra further confirm that these luminescence peaks originate from the eigenstates of the studied materials rather than from some localized exciton emission in GaAsN alloys.With the increase of N component, E_0 + Δ_0 and E + energy levels move to low energy and high energy directions, respectively, and staggered when the N content is 0.16% .A small amount of isodoping and micro-photoluminescence spectroscopy is proposed to directly observe the edge of semiconductor material Above the transition level, although the photoluminescence spectrum is usually not used to observe these energy levels.