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本文首次报道了溅射GaAs SOI电子束退火再结晶以及MBE GaAs SOI高频感应石墨棒热退火再结晶.对实验所得SOI样品,用ED和TEM分析GaAs 薄膜的结晶性,用X-射线衍射测量薄膜表面的择优取向,用霍耳效应测量定出载流子浓度和迁移率.
This paper reports for the first time the recrystallization of sputtered GaAs SOI electron beam annealing and the recrystallization of the MBE GaAs SOI high frequency induction graphite rod by thermal annealing.According to the experimental SOI samples, the crystallinity of the GaAs thin film was analyzed by ED and TEM and measured by X-ray diffraction The preferred orientation of the film surface is determined by Hall effect measurements of carrier concentration and mobility.