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目前实验证明，由分子束外延生长的应变层ＧａＩｎＡｓ渐变折射率分别限制异质结（ＧＲＩＮ ＳＣＨ）量子阱激光器，其性能相当于或优于ＯＭＶＰＥ生长的激光器。提高ＭＢＥ生长的激光器性能主要是优化生长条件，该结论来自以前生长应变调制掺杂ＦＥＴ的应变沟道。在此，我们将讨论ＧａＡｓＩｎ／ＧａＡｓ应变层结构的生长条件，这些应变层材料的特点以及在此条件下生长的激光器的直流和微波特性。
At present, experiments show that the GaInAs graded refractive index of the strain layer grown by molecular beam epitaxy respectively limits the GRIN SCH quantum well laser, and its performance is equal to or better than that of the OMVPE grown laser. The performance of lasers to increase MBE growth is mainly optimized growth conditions, which comes from the strained channels of previously grown strain-modulated doped FETs. Here, we discuss the growth conditions of the GaAsIn / GaAs strained layer structure, the characteristics of these strained layer materials, and the DC and microwave characteristics of lasers grown under these conditions.