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磁敏半导体元件一般地若将半导体放入磁场中,则引起电阻变化,或于特定的方向产生电势,或出现温差,或引起热传导率变化。并且上述各效应的强弱由所加磁场来决定。所以,如能定量地求出它们之间的关系,就可以根据这些关系来研究各方面的应用。同时因有这些效应,进而以此研制各种元件,目前做为磁敏元件应用于电子回路中的已有霍尔元件和磁阻元件两种,最近继这两种元件又出现了一种新的磁敏半导体元件——梭尼磁敏二极管(SMD)。霍尔效应和磁阻效应的原理如图1和图2所示,现简单地介绍此两种效应如下:
Generally, when a semiconductor is placed in a magnetic field, the magnetosensitive semiconductor element causes a change in electrical resistance, a potential in a specific direction, a temperature difference, or a change in thermal conductivity. And the strength of the above effects by the magnetic field to decide. Therefore, if we can quantitatively determine the relationship between them, we can study all aspects of the application based on these relations. At the same time due to these effects, and thus the development of a variety of components, the current magnetic sensors used in electronic circuits have been Hall elements and two kinds of magnetoresistive elements, the most recent of these two components there has been a new The magnetic sensitive semiconductor element - Sonic magnetic diode (SMD). Hall effect and magnetoresistance effect principle shown in Figure 1 and Figure 2, now briefly introduce the two effects are as follows: