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大容量MOS动态RAM的进展显著。促进这种进展的基本技术之一是单管单元。存储单元的设计左右着存储器芯片的整个设计。根据字线和数据线(位线)的结构,可以将在16K位阶段中已成为主流的单管单元分为几种。作者通过综合性的评价,主张对高集成度动态RAM采用低阻材料的字线形成的折叠式数据线最为合适。 集成度一但从256K位提高到1M位以上,信号电荷量的减少就成为问题。为了改善这一点,作为单管单元介绍堆积型和开槽型结构。也要涉及到最近的CMOS化的倾向。作者认为,最重要的是成本,目前尚未见到能取代单管单元的实用单元。
Massive MOS dynamic RAM has made significant headway. One of the basic technologies to facilitate this progress is the single-tube unit. The design of the memory cell is about the entire design of the memory chip. Depending on the structure of the word and data lines (bit lines), there are several types of single-tube cells that have become mainstream in the 16K bit phase. Through a comprehensive evaluation, the author advocates the most appropriate use of folded data lines formed by word lines of low resistance materials for highly integrated dynamic RAM. Once the integration is increased from 256K bits to over 1M bits, the reduction of the signal charge amount becomes a problem. To improve this, the stacked and slotted structure is introduced as a single-tube unit. Also related to the recent trend of CMOS. The author believes that the most important is the cost, but has not yet seen a practical unit that can replace the single-tube unit.