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用N-Al_xGa_(1-x)As/GaAs异质结构材料制造的高电子迁移率晶体管(HEMT),由于利用了异质结界面二维电子气的高电子迁移率等特点,较好地处理了GaAs MESFET技术中有源层内杂质散射与电子迁移率的矛盾,成为目前高速半导体器件中最有前途的新军,受到广泛重视.中国科学院物理研究所分子束外延组与南京固体器件研究所为了促进我国微波通讯事业等的发展,决定联合试制HEMT.现已获得初步实验结果:器件最大跨导值已超过100mS/mm,并进行了微波性能测试.
High electron mobility transistors (HEMTs) made of N-Al_xGa_ (1-x) As / GaAs heterostructure materials are better processed due to the high electron mobility of the two-dimensional electron gas at the heterojunction interface The contradiction between impurity scattering and electron mobility in the active layer of GaAs MESFET technology has become the most promising new army in high-speed semiconductor devices and has drawn wide attention. The Institute of Physics, Chinese Academy of Sciences Institute of Molecular Beam-epitaxy and Nanjing Institute of Solid Devices In order to promote the development of microwave communication in China, it is decided to jointly produce HEMT.Now the preliminary experimental results have been obtained: the maximum transconductance value of the device has exceeded 100mS / mm, and the microwave performance test has been carried out.