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利用二维动力学模型,通过变化MOCVD(metal organic chemical vapor deposition)反应器的进气流量、操作压力、衬底温度、基座旋转等几个重要工艺控制参数,计算了反应器内部均匀的流场和热场分布的形态变化,描述了输运过程中产生的多种流动现象,并给出了相应的分析与说明.在此基础上,通过微扰反应器的进气量,计算并图形化了质量输运过程的瞬态行为,分析了延迟时间、驰豫振荡、自脉动振荡等瞬态现象产生的原因,为高品质外延生长工艺的设计与实施,提供了有益的解决途径.
The two-dimensional kinetic model was used to calculate the internal flow rate of the reactor by changing several important process control parameters such as inlet flow rate, operating pressure, substrate temperature and susceptor rotation in MOCVD (metal organic chemical vapor deposition) reactor Field and thermal field distribution of the morphological changes described in the transport process of a variety of flow phenomena, and gives the corresponding analysis and description.Based on this, through the perturbation reactor intake, calculate and graphics The transient behavior of mass transport process is analyzed. The causes of transient phenomena such as delay time, relaxation oscillation and self-pulsation oscillation are analyzed, which provides a useful solution for the design and implementation of high quality epitaxial growth process.