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采用蒙特卡罗方法 ,对源料气体为CH4 H2 混合气的电子助进化学气相沉积 (EACVD)中的氢原子 (H)、碳原子(C)以及CH基团的发射过程进行了模拟 .研究了CH4 浓度、反应室气压和衬底偏压等工艺参数对发射光谱及成膜的影响 .研究发现 ,CH基团可能是有利于金刚石薄膜生长的活性基团 ,而碳原子不是 ;偏压的升高可提高电子平均温度及衬底表面附近氢原子的相对浓度 ;通过氢原子谱线可测定电子平均温度并找到最佳成膜实验条件 .该结果对EACVD生长金刚石薄膜过程中实时监测电子平均温度 ,有效控制工艺条件 ,生长出高质量的金刚石薄膜具有重要的意义 .
The emission processes of hydrogen atom (H), carbon atom (C) and CH group in EACVD using CH4 H2 mixture as raw material gas were simulated by Monte Carlo method. The influence of process parameters such as CH4 concentration, reaction chamber pressure and substrate bias on the emission spectrum and film formation was studied. It was found that CH group may be an active group that is conducive to the growth of diamond film, while the carbon atom is not; The average electron temperature can be increased and the relative concentration of hydrogen atoms in the vicinity of the substrate surface can be increased.The average electron temperature can be measured by hydrogen atomic spectrum and the best experimental conditions for film formation can be found.The results of real- Temperature, effective control of process conditions, the growth of high-quality diamond film is of great significance.