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For the frequency range of 1 kHz-10 MHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage(C-V) and conductance-frequency-voltage(G-f-V) measurements at room temperature.To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance(R_s) on high-frequency(5 MHz) capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the C_(HF)-C_(LF) capacitance and the conductance method are 2 ×10~(12) eV~(-1)cm~(-2) and 0.94 ×10~(12) eV~(-1) cm~(-2), respectively. Furthermore, the interface state densit.y derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.
For the frequency range of 1 kHz-10 MHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage (CV) and conductance-frequency-voltage (GfV) measurements at room temperature. To obtain the real capacitance and interface state density of the Ni / p-GaN structures, the effects of the series resistance (R_s) on high-frequency (5 MHz) capacitance values measured at a reverse and a forward bias are investigated. the C_ (HF) -C_ (LF) capacitance and the conductance method are 2 × 10 ~ (12) eV ~ (-1) cm -2 and 0.94 × 10 ~ 12 eV ~ (-1) cm ~ (-2), respectively. Respectively, the interface state densit.y derived from the conductance method is higher than that reported from the Ni / n-GaN in the literature, which iscribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.