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用一个栅极可控二极管器件来研究外加应力对锑化铟(InSb)p~+/n光伏红外探测器的漏电影响。通过实验证实了外加应力与栅极之间在其对电流-电压(I-V)特性的影响方面是等效的。在p~+/n结附近,外加栅电压与感应电荷载流子密度之间引入一个显式解析关系式,并在液氮温度下、在一种栅电压和适宜应力下,利用瞬时测量I-V特性技术,取得了相当于某一给定应力下的局部感应表面及体内电荷载流子密度。对在压电-半导体器件中因栅电压或因应力感应所致的漏电位置也作了讨论。
A gate-controlled diode device was used to study the effect of applied stress on the leakage of indium antimonide (InSb) p ~ + / n PV-IR detectors. It has been experimentally confirmed that the applied stress is equivalent to the gate in terms of its effect on the current-voltage (I-V) characteristics. In the vicinity of the p + / n junction, an explicit analytical relationship is introduced between the applied gate voltage and the induced charge carrier density, and at a liquid nitrogen temperature, at a gate voltage and appropriate stress, instantaneous measurements IV The characteristic technique achieves a local sensing surface corresponding to a given stress and a charge carrier density in the body. The location of the leakage due to gate voltage or stress induced in piezoelectric-semiconductor devices is also discussed.